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product specification www.jmnic.com silicon npn power transistors 2SC1051 description ? with to-3 package ? wide area of safe operation applications ? for low frequency power amplifier and large power switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
product specification www.jmnic.com 2 silicon npn power transistors 2SC1051 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 100 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 150 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 2.0 v v be base-emitter on voltage i c =1a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =150v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 40 320 f t transition frequency i c =0.5a ; v ce =5v 8 mhz ? h fe classifications c d e f 40-80 60-120 100-200 160-320
product specification www.jmnic.com 3 silicon npn power transistors 2SC1051 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

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